CHAO ZHAO-中国科学院大学-UCAS
[中文]
[English]
招生信息
教育背景
工作经历
教授课程
专利与奖励
出版信息
科研活动
指导学生
基本信息
赵超 男 博导 中国科学院微电子研究所电子邮件： zhaochao@ime.ac.cn通信地址： 北京市朝阳区北土城西路3号邮政编码： 100029
研究领域
CMOS集成电路工艺技术，MEMS，自旋电子器件和工艺
招生信息
招生专业
080903-微电子学与固体电子学080501-材料物理与化学085208-电子与通信工程
招生方向
集成电路先导工艺技术CMOS器件与工艺自旋电子学
教育背景
1994-12--1999-12 比利时天主教鲁汶大学 博士研究生1985-08--1988-07 哈尔滨工业大学/山东工业大学（联合培养） 硕士研究生1978-10--1982-07 南京大学 大学本科
学历
鲁汶大学博士研究生
学位
博士学位， 比利时鲁汶大学
工作经历
2010-03-2017-08 中国科学院微电子所集成电路先导工艺研发中心 主任， 研究员，博士生导师2000-01--2010-03 欧洲微电子研发中心（IMEC） 研究员 1993-12--1994-12 山东轻工业学院 副教授 1988-08--1993-12 山东轻工业学院 讲师 1982-08--1985-07 山东轻工业学院 助教
工作简历
2017-07~现在, 中国科学院微电子研究所, 副总工程师2011-07~2017-07,中国科学院微电子研究所, 先导中心（10室）主任2010-03~2011-07,中国科学院微电子研究所, 研究员2000-01~2010-03,欧洲微电子研发中心（IMEC）, 研究员1988-08~1994-12,山东轻工业学院, 讲师1982-08~1985-07,山东轻工业学院, 助教
教授课程
半导体工艺与制造技术半导体制造技术
专利与奖励
发明人所有发明人专利名称申请号申请日法律状态相应日期专利号1罗军罗军，邓坚，赵超，李俊峰，陈大鹏半导体器件制造方法201210147554.52012/5/11授权2017/9/5ZL201210147554.52钟汇才钟汇才，赵超，梁擎擎半导体器件及其制造方法201210304241.62012/8/23授权2017/1/25ZL201210304241.63包琦龙包琦龙，邓坚，罗军，赵超高电子迁移率晶体管及其制造方法201210343035.62012/9/14授权2017/2/8ZL201210343035.64钟汇才钟汇才，梁擎擎，赵超半导体器件及其制造方法201210333073.32012/9/10授权2017/6/13ZL201210333073.35崔虎山崔虎山，钟汇才，项金娟，赵超半导体器件制造方法201210475097.22012/11/21授权2017/11/21ZL201210475097.26王桂磊王桂磊 徐强 杨涛 闫江 李俊峰 赵超半导体器件及其制造方法201210473032.42012/11/20同意授权2017/12/14ZL201210473032.47秦长亮秦长亮 尹海洲 殷华湘 洪培真 王桂磊 赵超半导体器件制造方法201210495187.82012/11/28授权2017/11/21ZL201210495187.88朱慧珑朱慧珑，罗军，李春龙，邓坚，赵超平坦化处理方法201210505359.52012/11/30授权2017/3/1ZL201210505359.59李春龙李春龙，李俊峰，闫江，赵超一种后栅工艺假栅的制造方法和后栅工艺假栅201210509428.X2012/12/3授权2017/3/1ZL201210509428.X10李春龙李春龙，李俊峰，闫江，赵超一种后栅工艺假栅的制造方法和后栅工艺假栅201210510352.22012/12/3授权2017/3/1ZL201210510352.211秦长亮秦长亮 殷华湘 洪培真 马小龙 赵超 堆叠纳米线制造方法2013101100746.02013/3/29同意授权2017/10/11ZL201310110074612钟汇才钟汇才；罗军制造半导体器件的方法201410017352.82014/1/15授权2017/9/22ZL201410017352.813黄成军黄成军、罗军、赵超颗粒筛选装置201410350710.72014/7/22授权2017/10/20ZL201410350710.714黄成军黄成军；罗军；赵超微流体通道、侧向流监测器件和微流体阀201410350680.X2014/7/22授权2017/9/22ZL201410350680.X15朱慧珑朱慧珑，许淼，罗军，李春龙，王桂磊METHOD FOR MANUFACTURING FIN STRUCTURE14/442,8902015/5/14授权2017/6/279,691,62416徐强徐强、赵超、罗军、王桂磊、杨涛、李俊峰METHOD oF depositing tungsten layer with improved adhesion and filling behavior14/744,8352015/6/19授权2017/3/79,589,809奖励：2014年度中国科学院杰出科技成就奖；2015年朱李月华优秀教师奖；2016年北京市科技一等奖；2017年度院优秀博士生指导教师；
奖励信息
（1） 2117年中科院优秀博士生导师, 院级, 2017（2） 北京市科技一等奖, 一等奖, 省级, 2016（3） 朱李月华优秀教师奖, 一等奖, 院级, 2015（4） 中科院杰出科技成就奖, 特等奖, 院级, 2014
专利成果
（ 1 ） 一种半导体器件及其形成方法, 发明, 2010, 第 1 作者, 专利号: 201010512128.8（ 2 ） 堆叠的半导体器件及其制造方法, 发明, 2010, 第 1 作者, 专利号: 201010540727.0（ 3 ） 半导体器件及其制造方法, 发明, 2010, 第 1 作者, 专利号: 201010553050.4（ 4 ） 一种半导体器件及其形成方法, 发明, 2010, 第 1 作者, 专利号: 201010257006.9（ 5 ） 金属互连结构及金属层间通孔和互连金属线的形成方法, 发明, 2012, 第 1 作者, 专利号: 201010501703.4 （ 6 ） 一种用于后栅工艺的平坦化方法及其器件结构, 发明, 2010, 第 1 作者, 专利号: 201010274285.X（ 7 ） 一种半导体器件结构及形成方法, 发明, 2010, 第 1 作者, 专利号: 201010250728.1（ 8 ） 一种半导体器件及制备方法, 发明, 2010, 第 1 作者, 专利号: 201010501703.4（ 9 ） 自对准金属硅化物的形成方法, 发明, 2010, 第 2 作者, 专利号: 201010599252.2（ 10 ） 半导体器件制造方法, 发明, 2017, 第 3 作者, 专利号: ZL201210147554.5（ 11 ） 半导体器件及其制造方法, 发明, 2017, 第 2 作者, 专利号: ZL201210304241.6（ 12 ） 高电子迁移率晶体管及其制造方法, 发明, 2017, 第 4 作者, 专利号: ZL201210343035.6（ 13 ） 半导体器件及其制造方法, 发明, 2017, 第 3 作者, 专利号: ZL201210333073.3（ 14 ） 半导体器件制造方法, 发明, 2017, 第 4 作者, 专利号: ZL201210475097.2（ 15 ） 平坦化处理方法, 发明, 2017, 第 5 作者, 专利号: ZL201210505359.5（ 16 ） 一种后栅工艺假栅的制造方法和后栅工艺假栅, 发明, 2017, 第 4 作者, 专利号: ZL201210509428.X（ 17 ） 一种后栅工艺假栅的制造方法和后栅工艺假栅, 发明, 2017, 第 4 作者, 专利号: ZL201210510352.2（ 18 ） 堆叠纳米线制造方法, 发明, 2017, 第 5 作者, 专利号: ZL2013101100746（ 19 ） 微流体通道、侧向流监测器件和微流体阀, 发明, 2017, 第 3 作者, 专利号: ZL201410350710.7（ 20 ） METHOD oF depositing tungsten layer with improved adhesion and filling behavior, 发明, 2017, 第 2 作者, 专利号: 9589809
出版信息
1. Guilei Wang, Jun Luo, Jinbiao Liu, Tao Yang, Yefeng Xu, Junfeng Li, Huaxiang Yin, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye, Henry H. Radamson: pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology. Nanoscale Research Letters 12/2017; 12(1)., DOI:10.1186/s11671-017-2080-22. Guilei Wang, Jun Luo, Changliang Qin, Renrong Liang, Yefeng Xu, Jinbiao Liu, Junfeng Li, Huaxiang Yin, Jiang Yan, Huilong Zhu, Jun Xu, Chao Zhao, Henry H. Radamson, Tianchun Ye: Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors. Nanoscale Research Letters 12/2017; 12(1)., DOI:10.1186/s11671-017-1908-03. Yongbo Liu, Zhengyong Zhu, Huilong Zhu, Guangxing Wan, Junfeng Li, Chao Zhao: Charge pumping test technique using CMOS ring oscillator on leakage issue. Microelectronics Journal 10/2017; 68:40-43., DOI:10.1016/j.mejo.2017.08.0094. Jianyu Fu, Junjie Li, Xiaobin He, Jiahan Yu, Na Zhou, Qifeng Jiang, Junfeng Li, Weibing Wang, Chao Zhao: Fabricating metal structures with taper angles and smooth sidewalls. Journal of Micromechanics and Microengineering 09/2017; 27(12)., DOI:10.1088/1361-6439/aa8c435. Zhiqian Zhao, Jing Zhang, Xiaolei Wang, Shuhua Wei, Chao Zhao, Wenwu Wang: Angle-resolved x-ray photoelectron spectroscopy study of GeO x growth by plasma post-oxidation. Chinese Physics B 09/2017; 26(10):108201., DOI:10.1088/1674-1056/26/10/1082016. Yanrong Wang, Hong Yang, Hao Xu, Weichun Luo, Luwei Qi, Shuxiang Zhang, Wenwu Wang, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye: Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process. Chinese Physics B 08/2017; 26(8):087304., DOI:10.1088/1674-1056/26/8/0873047. Changliang Qin, Huaxiang Yin, Guilei Wang, Peizhen Hong, Xiaolong Ma, Hushan Cui, Yihong Lu, Lingkuan Meng, Haizhou Yin, Huicai Zhong, Jiang Yan, Huilong Zhu, Qiuxia Xu, Junfeng Li, Chao Zhao, Henry H. Radamson: Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs. Microelectronic Engineering 07/2017; 181., DOI:10.1016/j.mee.2017.07.0018. Zhengyong Zhu, Huilong Zhu, Sumei Wang, Yongbo Liu, Xiaogen Yin, Kunpeng Jia, Chao Zhao: Negative-Capacitance Characteristics in a Steady-State Ferroelectric Capacitor Made of Parallel Domains. IEEE Electron Device Letters 06/2017; PP(99):1-1., DOI:10.1109/LED.2017.27219549. Lixing Zhou, Xiaolei Wang, Xueli Ma, Jinjuan xiang, Hong Yang, Chao Zhao, Tianchun Ye, Wenwu Wang: Hole Mobility Degradation by Remote Coulomb Scattering and Charge Distribution in Al2O3/GeOx Gate Stacks in Bulk Ge pMOSFET with GeOx Grown by Ozone Oxidation. Journal of Physics D Applied Physics 04/2017; 50(24)., DOI:10.1088/1361-6463/aa6f9610. Xiaolei Wang, Jinjuan Xiang, Kai Han, Shengkai Wang, Jun Luo, Chao Zhao, Tianchun Ye, Henry H. Radamson, Eddy Simoen, Wenwu Wang: Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs. IEEE Transactions on Electron Devices 04/2017; PP(99):1-6., DOI:10.1109/TED.2017.268848911. Chaochao Fu, Yan Wang, Peng Xu, Lei Yue, Feng Sun, David Wei Zhang, Shi-Li Zhang, Jun Luo, Chao Zhao, Dongping Wu: Understanding the microwave annealing of silicon. AIP Advances 03/2017; 7(3):035214., DOI:10.1063/1.497891212. Henry H. Radamson, Jun Luo, Changliang Qin, Huaxiang Yin, Huilong Zhu, Chao Zhao, Guilei Wang: Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs. International Journal of High Speed Electronics and Systems 03/2017; 26(01n02):1740003., DOI:10.1142/S012915641740003113. Miao Xu, Huilong Zhu, Yanbo Zhang, Qiuxia Xu, Yongkui Zhang, Changliang Qin, Qingzhu Zhang, Huaxiang Yin, Hao Xu, Shuai Chen, Jun Luo, Chunlong Li, Chao Zhao, Tianchun Ye: Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks. Solid-State Electronics 03/2017; 129:52-60., DOI:10.1016/j.sse.2016.12.01614. Xue-Li Ma, Hong Yang, Jin-Juan Xiang, Xiao-Lei Wang, Wen-Wu Wang, Jian-Qi Zhang, Hua-Xiang Yin, Hui-Long Zhu, Chao Zhao: Crystallization behaviors of ultrathin Al-doped HfO 2 amorphous films grown by atomic layer deposition. Chinese Physics B 02/2017; 26(2):027701., DOI:10.1088/1674-1056/26/2/02770115. Shu-Juan Mao, Jing Xu, Gui-Lei Wang, Jun Luo, Ning-Yuan Duan, Eddy Simoen, Henry Radamson, Wen-Wu Wang, Da-Peng Chen, Jun-Feng Li, Chao Zhao, Tian-Chun Ye: On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSi x for Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes. 01/2017; 6(9):P660-P664., DOI:10.1149/2.0321709jss16. J. B. Liu, Jun Luo, Eddy Simoen, Guilei Wang, Jinjuan Xiang, Junfeng Li, Chao Zhao, Tianchun Ye: Hot Implantations of P into Ge: Impact on the Diffusion Profile. 01/2017; 6(1):P73-P77., DOI:10.1149/2.0311701jss17. Jinjuan Xiang, Xiaolei Wang, Tingting Li, Jianfeng Gao, Kai Han, Jiahan Yu, Wenwu Wang, Junfeng Li, Chao Zhao: Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO 2 Dielectric Using TaCl 5 and TEA as Precursors. 01/2017; 6(1):P38-P41., DOI:10.1149/2.0141701jss18. Shu-Juan Mao, Zheng-Yong Zhu, Gui-Lei Wang, Hui-Long Zhu, Jun-Feng Li, Chao Zhao: High-Mobility P-Type MOSFETs with Integrated Strained-Si 0.73 Ge 0.27 Channels and High-κ/Metal Gates. Chinese Physics Letters 11/2016; 33(11):118502., DOI:10.1088/0256-307X/33/11/11850219. Sen Huang, Xinyu Liu, Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Qilong Bao, Ke Wei, Yingkui Zheng, Chao Zhao, Hongwei Gao, Qian Sun, Zhaofu Zhang, Kevin J. Chen: High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure. IEEE Electron Device Letters 10/2016; PP(99):1-1., DOI:10.1109/LED.2016.261738120. Ningyuan Duan, Jun Luo, Guilei Wang, Jinbiao Liu, Eddy Simoen, Shujuan Mao, Henry Radamson, Xiaolei Wang, Junfeng Li, Wenwu Wang, Chao Zhao, Tianchun Ye: Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation. IEEE Transactions on Electron Devices 09/2016; PP(99):1-4., DOI:10.1109/TED.2016.261046121. J. Luo, J. Liu, E. Simoen, G. Wang, S. Mao, H. H. Radamson, N. Duan, J. Li, W. Wang, D. Chen, C. Zhao, T. Ye: (Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping. ECS Transactions 09/2016; 75(4):219-226., DOI:10.1149/07504.0219ecst22. G. Wang, J. Luo, C. Qin, H. Cui, J. Liu, K. Jia, J. Li, T. Yang, H. Yin, C. Zhao, T. Ye, P. Yang, G. Jayakumar, H. H. Radamson: Integration of Selective Epitaxial Growth of SiGe/Ge Layers in 14nm Node FinFETs. ECS Transactions 09/2016; 75(8):273-279., DOI:10.1149/07508.0273ecst23. Changliang Qin, Guilei Wang, Peizhen Hong, Jinbiao Liu, Huaxiang Yin, Haizhou Yin, Xiaolong Ma, Hushan Cui, Yihong Lu, Lingkuan Meng, Jinjuan Xiang, Huicai Zhong, Huilong Zhu, Qiuxia Xu, Junfeng Li, Jian Yan, Chao Zhao, Henry H. Radamson: Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22nm all-last high-k/metal-gate pMOSFETs. Solid-State Electronics 09/2016; 123:38-43., DOI:10.1016/j.sse.2016.05.01724. Xiaolei Wang, Zhiqian Zhao, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Chao Zhao, Tianchun Ye: Experimental investigation on oxidation kinetics of germanium by ozone. Applied Surface Science 08/2016; 390., DOI:10.1016/j.apsusc.2016.08.12325. Kunpeng Jia, Yajuan Su, Jun Zhan, Kashif Shahzad, Huilong Zhu, Chao Zhao, Jun Luo: Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts. Nanomaterials 08/2016; 6(9)., DOI:10.3390/nano609015826. Hao Xu, Hong Yang, Wei-Chun Luo, Ye-Feng Xu, Yan-Rong Wang, Bo Tang, Wen-Wu Wang, Lu-Wei Qi, Jun-Feng Li, Jiang Yan, Hui-Long Zhu, Chao Zhao, Da-Peng Chen, Tian-Chun Ye: Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations. Chinese Physics B 08/2016; 25(8):087305., DOI:10.1088/1674-1056/25/8/08730527. Hao Xu, Hong Yang, Yan-Rong Wang, Wen-Wu Wang, Wei-Chun Luo, Lu-Wei Qi, Jun-Feng Li, Chao Zhao, Da-Peng Chen, Tian-Chun Ye: Temperature- and voltage-dependent trap generation model in high- k metal gate MOS device with percolation simulation. Chinese Physics B 08/2016; 25(8):087306., DOI:10.1088/1674-1056/25/8/08730628. Eddy Simoen, Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla, Nadine Collaert: Defect engineering for shallow n‐type junctions in germanium: Facts and fiction. Physica Status Solidi (A) Applications and Materials 07/2016; 213(11)., DOI:10.1002/pssa.20160049129. Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Hushan Cui, Junfeng Li, Chao Zhao, Xinyu Liu, Jinhan Zhang, Qi Zhou, Wanjun Chen, Bo Zhang, Lifang Jia: Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs. Journal of Vacuum Science & Technology B 07/2016; 34(4-4)., DOI:10.1116/1.494466230. Xiaolei Wang, Jinjuan Xiang, Shengkai Wang, Wenwu Wang, Chao Zhao, Tianchun Ye, Yuhua Xiong, Jing Zhang: Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al 2 O 3 gate dielectrics. Journal of Physics D Applied Physics 06/2016; 49(25):255104., DOI:10.1088/0022-3727/49/25/25510431. Guilei Wang, Changliang Qin, Huaxiang Yin, Jun Luo, Ningyuan Duan, Ping Yang, Xingyu Gao, Tao Yang, Junfeng Li, Jiang Yan, Huilong Zhu, WenWu Wang, Dapeng Chen, Tianchun Ye, Chao Zhao, Henry H. Radamson: Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology. Microelectronic Engineering 06/2016; 163., DOI:10.1016/j.mee.2016.06.00232. Qilong Bao, Sen Huang, Xinhua Wang, Ke Wei, Yingkui Zheng, Yankui Li, Chengyue Yang, Haojie Jiang, Junfeng Li, Anqi Hu, Xuelin Yang, Bo Shen, Xinyu Liu, Chao Zhao: Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiN x /AlGaN/GaN metal-insulator-semiconductor structure. Semiconductor Science and Technology 06/2016; 31(6):065014., DOI:10.1088/0268-1242/31/6/06501433. Hao Xu, Hong Yang, Yanrong Wang, Wenwu Wang, Guangxing Wan, Shangqing Ren, Weichun Luo, Luwei Qi, Chao Zhao, Dapeng Chen, Xinyu Liu, Tianchun Ye: Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high- k /metal gate stacks. Journal of Semiconductors 05/2016; 37(5):054005., DOI:10.1088/1674-4926/37/5/05400534. Xing Wei, Huilong Zhu, Yanbo Zhang, Chao Zhao: Bulk FinFETs with body spacers for improving fin height variation. Solid-State Electronics 05/2016; 122., DOI:10.1016/j.sse.2016.04.00935. Weichun Luo, Hong Yang, Wenwu Wang, Yefeng Xu, Bo Tang, Shangqing Ren, Hao Xu, Yanrong Wang, Luwei Qi, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye: Accurate lifetime prediction for channel hot carrier stress on sub-1nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. Microelectronics Reliability 05/2016; 62., DOI:10.1016/j.microrel.2016.03.00836. Chaochao Fu, Xiangbiao Zhou, Yan Wang, Peng Xu, Ming Xu, Dongping Wu, Jun Luo, Chao Zhao, Shi-Li Zhang: Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing. Materials 04/2016; 9(5):315., DOI:10.3390/ma905031537. Jinjuan Xiang, Yanbo Zhang, Tingting Li, Xiaolei Wang, Jianfeng Gao, Huaxiang Yin, Junfeng Li, Wenwu Wang, Yuqiang Ding, Chongying Xu, Chao Zhao: Investigation of thermal atomic layer deposited TiAlX (X=N or C) film as metal gate. Solid-State Electronics 04/2016; 122., DOI:10.1016/j.sse.2016.04.00638. Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Chao Zhao, Jing Zhang: Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness. Surface Science 04/2016; 651., DOI:10.1016/j.susc.2016.04.00139. Wen Fang, Anabela Veloso, Eddy simoen, M.-J. Cho, Nadine Collaert, Aaron Thean, Jun Luo, Chao Zhao, Tianchun Ye, Cor Claeys: Impact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs. IEEE Electron Device Letters 04/2016; 37(4):1-1., DOI:10.1109/LED.2016.253084940. Jinjuan Xiang, Yuqiang Ding, Liyong Du, Junfeng Li, Wenwu Wang, Chao Zhao: Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl 4 and TMA precursors. Chinese Physics B 03/2016; 25(3):037308., DOI:10.1088/1674-1056/25/3/03730841. Qiuxia Xu, G. Xu, H. Zhou, H. Zhu, J. Liu, Y. Wang, J. Li, J. Xiang, Q. Liang, H. Wu, J. Zhong, M. Xu, W. Xu, X. Ma, X. Wang, X. Tong, D. Chen, J. Yan, C. Zhao, T. Ye: Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device. Solid-State Electronics 01/2016; 115:26-32., DOI:10.1016/j.sse.2015.09.01942. 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Yu, J.D. Chen, M.F. Li, S.J. Lee, D.L. Kwong, M. van Dal, J.A. Kittl, A. Lauwers, E. Augendre, S. Kubicek, C. Zhao, H. Bender, B. Brijs, L. Geenen, A. Benedetti, P. Absil, M. Jurczak, S. Biesemans: Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge. Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International; 01/2006, DOI:10.1109/IEDM.2005.1609429241. S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C Zhao, M. Heyns: Physical characterization of HfO2 deposited on Ge substrates by MOCVD. Semiconductor Device Research Symposium, 2003 International; 01/2004, DOI:10.1109/ISDRS.2003.1271981242. S. De Gendt, J Chen, R. Carter, E. Cartier, M. Caymax, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, J.W. Maes, M Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y Shimamoto, W. Tsai, E. Rohr, S. Van Elshocht, T. Witters, E. Young, C Zhao, M. Heyns: Implementation of high-k gate dielectrics - a status update. Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on; 12/2003, DOI:10.1109/IWGI.2003.159172243. M. Heyns, S. Beckx, H. Bender, P. Blomme, W. Boullart, B. Brijs, R. Carter, M. Caymax, M. Claes, T. Conard, S. De Gendt, R. Degraeve, A. Delabie, W. Deweerdt, G. Groeseneken, K. Henson, T. Kauerauf, S. Kubicek, L. Lucci, G. Lujan, J. Mentens, L. Pantisano, J. Petry, O. Richard, Eduardo Rohr, T. Schram, W. Vandervorst, P. Van Doorne, S. Van Elshocht, J. Westlinder, T. Witters, C. Zhao, E. Cartier, J. Chen, V. Cosnier, M. Green, S.E. Jang, V. Kaushik, A. Kerber, J. Kluth, S. Lin, W. Tsai, E. Young, Y. Manabe, Y. Shimamoto, P. Bajolet, H. De Witte, J.W. Maes, L. Date, Didier Pique, B. Coenegrachts, J. Vertommen, S. Passefort: Scaling of high-k dielectrics towards sub-1nm EOT. VLSI Technology, Systems, and Applications, 2003 International Symposium on; 02/2003, DOI:10.1109/VTSA.2003.1252599244. L Nistor, O Richard, C Zhao, H Bender, A Stesmans, G Van Tendeloo: A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films. Conference on Microscopy of Semiconducting Materials; 01/2003245. P.J. Chen, E. Cartier, R.J. Carter, T. Kauerauf, C. Zhao, J. Petry, V. Cosnier, Z. Xu, A. Kerber, W. Tsai, E. Young, S. Kubicek, M. Caymax, W. Vandervorst, S. De Gendt, M. Heyns, M. Copel, W.F.A. Besling, P. Bajolet, J. Maes: Thermal stability and scalability of Zr-aluminate-based high-k gate stacks. VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on; 02/2002, DOI:10.1109/VLSIT.2002.1015448246. V. Cosnier, H. Bender, A. Caymax, J. Chen, T. Conard, H. Nohira, O. Richard, W. Tsai, W. Vandervorst, E. Young, C. Zhao, S. De Gendt, A. Heyns, J.W.H. Maes, M. Tuominen, N. Rochat, M. Olivier, A. Chabli: Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition. Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on; 02/2001, DOI:10.1109/IWGI.2001.967590247. H. Bender, T. Conard, H. Nohira, J. Petry, O. Richard, C. Zhao, B. Brijs, W. Besling, C. Detavernier, W. Vandervorst, M. Caymax, S. De Gendt, J. Chen, J. Kluth, W. Tsai, J.W. Maes: Physical characterisation of high-k gate stacks deposited on HF-last surfaces. Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on; 02/2001, DOI:10.1109/IWGI.2001.967553248. Richard, H Bender, M Houssa, C Zhao: Characterisation of ALCVD ZrO2 thin films by TEM. Royal-Microscopical-Society Conference on Microscopy of Semiconducting; 01/2001
发表论文
（1） Switching of Exchange-Coupled Perpendicularly Magnetized Layers Under Spin-Orbit Torque, IEEE Transactions on Magnetics, 2018, 第 4 作者（2） Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies, Microelectronic Engineering, 2018, 第 10 作者（3） Deterministic switching of perpendicularly magnetic layers by spin orbital torque through stray field engineering, IEEE Magnetics Letters, 2017, 第 3 作者（4） : pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology., Nanoscale Research Letters, 2017, 第 10 作者（5） Charge pumping test technique using CMOS ring oscillator on leakage issue, Microelectronics Journal, 2017, 第 6 作者（6） Fabricating metal structures with taper angles and smooth sidewalls., Journal of Micromechanics and Microengineering, 2017, 第 9 作者（7） Angle-resolved x-ray photoelectron spectroscopy study of GeO x growth by plasma post-oxidation., Chinese Physics B, 2017, 第 5 作者（8） Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process, Chinese Physics B, 2017, 第 10 作者（9） Negative-Capacitance Characteristics in a Steady-State Ferroelectric Capacitor Made of Parallel Domains., IEEE Electron Device Letters, 2017, 第 7 作者（10） Hole Mobility Degradation by Remote Coulomb Scattering and Charge Distribution in Al2O3/GeOx Gate Stacks in Bulk Ge pMOSFET with GeOx Grown by Ozone Oxidation, Journal of Physics D Applied Physics, 2017, 第 6 作者（11） Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs., IEEE Transactions on Electron Devices, 2017, 第 6 作者（12） Understanding the microwave annealing of silicon, AIP Advances, 2017, 第 9 作者（13） Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs, International Journal of High Speed Electronics and Systems, 2017, 第 6 作者（14） Crystallization behaviors of ultrathin Al-doped HfO 2 amorphous films grown by atomic layer deposition, Chinese Physics B, 2017, 第 7 作者（15） Hot Implantations of P into Ge: Impact on the Diffusion Profile., Journal of Applied Physics, 2017, 第 7 作者（16） Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO 2 Dielectric Using TaCl 5 and TEA as Precursors, ECS Journal of Solid State Science and Technology,, 2017, 第 9 作者（17） High-Mobility P-Type MOSFETs with Integrated Strained-Si 0.73 Ge 0.27 Channels and High-κ/Metal Gates, Chinese Physics Letters, 2016, 第 6 作者（18） HfSiON high-k layer compatibility study with Tetramethyl ammonium hydroxide (TMAH) solution, HfSiON high-k layer compatibility study with Tetramethyl ammonium hydroxide (TMAH) solution, 2012, 第 2 作者（19） Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate, IEEE Trans. Electron Devices, 2012, 通讯作者（20） Texture Characterization of Cu Interconnects with Different Ta-based Sidewall Diffusion Barriers, Microelectronics Engineering, 2011, 第 2 作者（21） Barrier and Seed Repair Performance of Thin RuTa Films for Cu Interconnects, Microelectronic Engineering, 2011, 第 4 作者（22） High performance N- and P-type gate-all-around nanowire MOSFETs fabricated on bulk Si by COMS-compatible process, IEEE Device Research Conference (DRC), 2011, 第 4 作者（23） Thermal stability and dopant segregation for Schottky diodes with ultrathin epitaxial NiSi2-y, IEEE Electron Device Lett., 2011, 通讯作者（24） Gap Filling for High AR features, CSTIC 2010, Invited Speech, 2010, 第 1 作者（25） High-performance silicon nanowire gate-all-around nMOSFETs fabricated on bulk substrate using CMOS-compatible process, IEEE Electron Devices Lett., 2010, 通讯作者
发表著作
（1） CMOS Past, Present and Future, ELSEVIER, 2018-04, 第 4 作者
科研活动
科研项目
（ 1 ） 16/14nm基础技术研究, 主持, 国家级, 2015-01--2018-01（ 2 ） 先导集成电路器件, 主持, 部委级, 2015-01--2018-01（ 3 ） 专利专项资金奖励, 主持, 研究所（学校）, 2016-01--2017-01
参与会议
（1）Gap Filling for High AR features zhao chao 2010-03-12
指导学生
已指导学生柯星星 硕士研究生 080903-微电子学与固体电子学 方雯 博士研究生 080903-微电子学与固体电子学 邓坚 硕士研究生 430109-电子与通信工程 包琦龙 硕士研究生 430109-电子与通信工程 项金娟 博士研究生 080903-微电子学与固体电子学 杨杰 硕士研究生 080903-微电子学与固体电子学 陈文辉 博士研究生 080903-微电子学与固体电子学 包琦龙 博士研究生 080903-微电子学与固体电子学 李睿 硕士研究生 085208-电子与通信工程 马小龙 博士研究生 080903-微电子学与固体电子学 郭奕栾 硕士研究生 080903-微电子学与固体电子学 王桂磊 博士研究生 085271-电子与信息 段宁远 博士研究生 080903-微电子学与固体电子学 现指导学生罗雪 博士研究生 080903-微电子学与固体电子学 刘耀东 博士研究生 080903-微电子学与固体电子学 毛淑娟 博士研究生 080903-微电子学与固体电子学 刁华彬 硕士研究生 080903-微电子学与固体电子学 孟然哲 博士研究生 080903-微电子学与固体电子学 熊文娟 博士研究生 080903-微电子学与固体电子学 李彦如 博士研究生 080903-微电子学与固体电子学 赵磊 硕士研究生 080903-微电子学与固体电子学
2013 中国科学院大学，网络信息中心.